Abstract
The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 1018 cm−3) and to the overlap of the impurity band with the conduction band (∼2 × 1019 cm−3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.
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N. Vico Triviño, G. Rossbach, U. Dharanipathy, J. Levrat, A. Castiglia, J.-F. Carlin, K. A. Atlasov, R. Butté, R. Houdré, and N. Grandjean, Appl. Phys. Lett. 100, 071103 (2012).
M. Zhang, T. F. Zhou, Y. M. Zhang, B. Li, S. N. Zheng, J. Huang, Y. M. Sun, G. Q. Ren, J. F. Wang, F. Hu, and H. Yang, Appl. Phys. Lett. 100, 041904 (2012).
Y. Takagi, T. Suwa, H. Sekiguchi, H. Okada, and A. Wakahara, Appl. Phys. Lett. 99, 171905 (2011).
S. Farvid, M. Hegde, I. D. Hosein, and V. Radovanovich, Appl. Phys. Lett. 99, 222504 (2011).
M. A. Reshchikov, A. G. Willyard, A. Behrends, A. Bakin, and A. Waag, Appl. Phys. Lett. 99, 171110 (2011).
X. Wang, M. Zhao, Z. Wang, X. He, Y. Hi, and S. Yan, Appl. Phys. Lett. 100, 192401 (2012).
V. G. Dubrovski, V. Consonni, L. Geelhaar, A. Trampert, and H. Riechert, Appl. Phys. Lett. 100, 153101 (2012).
K. Kornitzer, T. A. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B: Condens. Matter 60, 1471 (1999).
P. Stepniewski, K. P. Korona, A. Wysmolek, J. M. Baranowski, K. Pakula, M. Potemski, G. Martinez, I. Grzegory, and S. Porowski, Phys. Rev. B: Condens. Matter 56, 15151 (1997).
T. Ishiguro, Y. Toda, and S. Adachi, Appl. Phys. Lett. 90, 011904 (2007).
E. Oh, B. W. Lee, S.-J. Shim, H.-J. Choi, B. N. Son, Y. H. Ahn, and L. S. Dang, Appl. Phys. Lett. 100, 153110 (2012).
T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil, and B. Monemar, Appl. Phys. Lett. 99, 101108 (2011).
H. Nykänen, S. Suihkonen, L. Kilanski, M. Sopanen, and F. Tuomisto, Appl. Phys. Lett. 100, 122105 (2012).
S. Fritze, A. Dadgar, H. Witte, M. Bägler, A. Rohrbeck, J. Bläsing, A. Hoffmann, and A. Krost, Appl. Phys. Lett. 100, 122104 (2012).
V. F. Agekyan, L. E. Vorob’ev, G. A. Melentyev, N. Nykänen, A. Yu. Serov, S. Suihkonen, N. G. Filosofov, and V. A. Shalygin, Phys. Solid State 55(2), 296 (2013).
V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakhayin, S. Suihkonen, P. T. Törma, M. Ali, and H. Lipsanen, J. Appl. Phys. 106, 123523 (2009).
N. F. Mott and W. D. Twose, Adv. Phys. 10, 107 (1961).
A. L. Efros and B. I. Shklovskii, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, Berlin, 1984).
A. P. Levanyuk and V. V. Osipov, Sov. Phys.-Usp. 24(3), 187 (1981).
S. A. Permogorov, in Excitons, Ed. by E. I. Rashba and M. D. Sturge (North-Holland, Amsterdam, 1982), p. 177.
S. Yu. Verbin, A. A. Klochikhin, S. A. Permogorov, and A. N. Reznitskii, Sov. Phys. Solid State 22(4), 1221 (1980).
M. G. Tkachman, T. V. Shubina, I. N. Zhmerik, S. V. Ivanov, P. S. Kop’ev, T. Paskova, and B. Monemar, Semiconductors 37(5), 532 (2003).
H. Siegle, P. Thurian, L. Eckey, A. Hoffman, C. Thomsen, B. K. Meyer, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu, Appl. Phys. Lett. 68, 1265 (1996).
H. J. Park, C. Park, S. Yeo, S. W. Kang, M. Mastro, O. Kryliouk, and T. J. Anderson, Phys. Status Solidi C 2, 2446 (2005).
V. Yu. Davydov, A. N. Smirnov, I. N. Goncharuk, R. N. Kyutt, M. P. Scheglov, M. V. Baidakova, W. V. Lundin, E. E. Zavarin, M. B. Smirnov, S. V. Karpov, and H. Harima, Phys. Status Solidi B 234, 975 (2002).
S. Kim, I. P. Herman, J. A. Tuchman, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 380 (1995).
T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hachimoto, N. Koide, and K. Manabe, J. Appl. Phys. 75, 1098 (1993).
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Original Russian Text © V.F. Agekyan, E.V. Borisov, L.E. Vorobjev, G.A. Melentyev, H. Nykänen, L. Riuttanen, A.Yu. Serov, S. Suihkonen, O. Svensk, N. G. Filisofov, V. A. Shalygin, L.A. Shelukhin, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 4, pp. 768–774.
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Agekyan, V.F., Borisov, E.V., Vorobjev, L.E. et al. Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels. Phys. Solid State 57, 787–793 (2015). https://doi.org/10.1134/S1063783415040046
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DOI: https://doi.org/10.1134/S1063783415040046