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Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity

  • Semiconductors and Dielectrics
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Abstract

The transport properties of Mg2 X 0.4Sn0.6 (X = Si, Ge) solid solutions are investigated. It is shown that these materials can be rendered p-type with a hole concentration of up to 4 × 1019 cm−3. The Hall coefficient, thermopower, and electrical conductivity are measured over a wide temperature range. The mobility of holes in these solid solutions is less than that of electrons by a factor of 2 for Mg2Si0.4Sn0.6 and by a factor of 1.5 for Mg2Ge0.4Sn0.6. Solid solutions in the Mg2Ge-Mg2Sn system appear more promising for thermoelectric applications.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. I. Fedorov, V. K. Zaĭtsev, I. S. Eremin, E. A. Gurieva, A. T. Burkov, P. P. Konstantinov, M. V. Vedernikov, A. Yu. Samunin, G. N. Isachenko & A. A. Shabaldin

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  1. M. I. Fedorov
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  2. V. K. Zaĭtsev
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  3. I. S. Eremin
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  4. E. A. Gurieva
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  5. A. T. Burkov
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  6. P. P. Konstantinov
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  7. M. V. Vedernikov
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  8. A. Yu. Samunin
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  9. G. N. Isachenko
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  10. A. A. Shabaldin
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Additional information

Original Russian Text © M.I. Fedorov, V.K. Zaĭtsev, I.S. Eremin, E.A. Gurieva, A.T. Burkov, P.P. Konstantinov, M.V. Vedernikov, A.Yu. Samunin, G.N. Isachenko, A.A. Shabaldin, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 8, pp. 1402–1406.

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Fedorov, M.I., Zaĭtsev, V.K., Eremin, I.S. et al. Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity. Phys. Solid State 48, 1486–1490 (2006). https://doi.org/10.1134/S1063783406080117

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  • DOI: https://doi.org/10.1134/S1063783406080117

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