Abstract
This paper contains an analysis of published experimental data on the magnetoresistance in the region of Mott hopping conduction in various carbon materials whose properties are determined by nanoscale inhomogeneities. The validity of the mechanism of shrinkage of a localized state in a magnetic field and the spin polarization mechanism involving the spin-dependent contribution of hopping over doubly occupied electronic states is considered. A simple analytic model is proposed for the spin polarization mechanism. An expression for magnetoresistance in a weak magnetic field is derived within the proposed model. It is demonstrated that only a combined effect of the spin-polarization mechanism and wave function shrinkage is capable of providing an adequate description of the magnetoresistance of carbon nanomaterials. Promising areas to search for objects with high magnetoresistance among the materials of this class are discussed.
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References
A. W. P. Fung, Z. H. Wang, M. S. Dresselhaus, G. Dresselhaus, R. W. Pekala, and M. Endo, Phys. Rev. B: Condens. Matter 49(24), 17325 (1994).
G. T. Kim, E. S. Choi, D. C. Kim, D. S. Suh, Y. W. Park, K. Liu, G. Duesberg, and S. Roth, Phys. Rev. B: Condens. Matter. 58(24), 16064 (1998).
V. A. Samuilov, J. Galibert, V. K. Ksenevich, V. J. Goldman, M. Rafailovich, J. Sokolov, I. A. Bashmakov, and V. A. Dorosinets, Physica B (Amsterdam) 294–295, 319 (2001).
S. V. Demishev, A. A. Pronin, N. E. Sluchanko, N. A. Samarin, A. G. Lyapin, V. V. Brazhkin, T. D. Varfolomeeva, and S. V. Popova, Pis’ma Zh. Éksp. Teor. Fiz. 72(7), 547 (2000) [JETP Lett. 72 (7), 381 (2000)].
S. V. Demishev, A. A. Pronin, V. V. Glushkov, N. E. Sluchanko, N. A. Samarin, M. V. Kondrin, A. G. Lyapin, V. V. Brazhkin, T. D. Varfolomeeva, and S. V. Popova, Zh. Éksp. Teor. Fiz. 122(1), 140 (2002) [JETP 95 (1), 123 (2002)].
S. V. Demishev, A. A. Pronin, V. V. Glushkov, N. E. Sluchanko, N. A. Samarin, M. V. Kondrin, A. G. Lyapin, V. V. Brazhkin, T. D. Varfolomeeva, and S. V. Popova, Pis’ma Zh. Éksp. Teor. Fiz. 78(8), 984 (2003) [JETP Lett. 78 (8), 511 (2003)].
B. I. Shklovskiĭ and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, Berlin, 1984).
M. E. Raikh, J. Czingon, Qiu-yi Ye, F. Koch, W. Schoepe, and K. Ploog, Phys. Rev. B: Condens. Matter 45(11), 6015 (1992).
S. V. Demishev, in Hopping and Related Phenomena 5 (Proceedings of the Fifth International Conference on Hopping and Related Phenomena), Ed. by C. J. Adkins, A. R. Long, and J. A. McInnes (World Scientific, Singapore, 1994), p. 179.
S. V. Demishev, D. G. Lunts, N. E. Sluchanko, N. A. Samarin, and A. G. Lyapin, Zh. Éksp. Teor. Fiz. 110(1), 334 (1996) [JETP 83 (1), 180 (1996)].
A. Kurobe and H. Kamimura, J. Phys. Soc. Jpn. 51(6), 1904 (1982).
K. A. Matveev, L. I. Glazman, Penny Clarke, D. Ephron, and M. R. Beasley, Phys. Rev. B: Condens. Matter 52(7), 5289 (1995).
I. P. Zvyagin, Critical Phenomena in Disordered Semiconductors (Moscow State University, Moscow, 1984) [in Russian].
V. M. Galitskiĭ, B. M. Karnakov, and V. I. Kogan, Problems in Quantum Mechanics (Nauka, Moscow, 1981), p. 418 [in Russian].
N. Mott and E. Davis, Electronic Processes in Non-Crystalline Materials (Oxford University Press, Oxford, 1979; Mir, Moscow, 1982).
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Original Russian Text © S.V. Demishev, A.A. Pronin, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 7, pp. 1285–1294.