Abstract
Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation- related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3 × 10–20 cm2 s at room temperature.
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Sobolev, N.A., Kalyadin, A.E., Shtel’makh, K.F. et al. Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates. Semiconductors 57, 343–346 (2023). https://doi.org/10.1134/S1063782623090178
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DOI: https://doi.org/10.1134/S1063782623090178