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Current Generation in Pd/InP Structures in Hydrogen Medium

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Abstract

The current generation mechanism in Pd/InP Schottky diodes has been studied in the range of 90–300 K in vacuum, hydrogen-nitrogen mixture of concentration from 4 to 100 vol %, and under illuminating of the structures by LED with the wavelength of 0.9 μm, corresponding to the absorption edge in InP. It was shown that at low temperature (T = 90 K) I–V characteristics of the structures in vacuum have rectifying character with the barrier height of 130– 150 meV. In hydrogen-nitrogen medium the barrier height decreases almost to zero with increasing the temperature to 300 K due to palladium work function decreasing. It was demonstrated that under simultaneous impact of illumination (λ = 0.9 μm) and hydrogen-nitrogen mixture there are two opposite directed electron flows in the structures, one of which is related to the LED illumination and the other one to hydrogen absorption in palladium layer.

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REFERENCES

  1. A. S. Mokrushin, R. V. Radchenko, V. V. Tyul’pa. Vodorod v energetike (Ekaterinburg, Izd. Ural. Univ., 2014), p. 156 (in Russian).

    Google Scholar 

  2. B. V. Nekrasov. Osnovy obshchei khimii (M., Khimiya, 1973), Vol. 2, p. 382 (in Russian).

    Google Scholar 

  3. E. A. Grebenshchikova, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev. Semiconductors, 53 (2), 234 (2019).

    Article  CAS  ADS  Google Scholar 

  4. V. A. Shutaev, E. A. Grebenshchikova, A. A. Pivovarova, V. G. Sidorov, L. K. Vlasov, Yu. P. Yakovlev. Semiconductors, 53 (10), 1389 (2019).

    Article  CAS  ADS  Google Scholar 

  5. K. Okuyama, N. Takinami, Y. Chiba, S. Ohshima, S. Kambe. J. Appl. Phys., 76 (1), 231 (1994).

    Article  CAS  ADS  Google Scholar 

  6. G. I. Zhirov. Fiz. Tekh. Vys. Davlenii, 13 (2), 71 (2003) (in Russian).

    CAS  Google Scholar 

  7. C. C. Ndaya, N. Javahiraly, A. Brioude. Sensors, 19 (20), 4478 (2019).

    Article  CAS  PubMed  PubMed Central  ADS  Google Scholar 

  8. Yu. M. Koroteev, O. V. Gimranova, I. P. Chernov. Phys. Solid State, 53 (5), 896 (2011).

    Article  CAS  ADS  Google Scholar 

  9. M. Yussouf, B. K. Rao, P. Jena. Solid State Commun., 94 (7), 549 (1995).

    Article  ADS  Google Scholar 

  10. P. Hertel. Z. Physic, 268, 111 (1974).

    CAS  ADS  Google Scholar 

  11. P. Tripodi, D. DI. Gloacchino, J.D. Vinko. Int. J. Mod. Phys. B, 21 (18), 3343 (2007).

    Article  CAS  ADS  Google Scholar 

  12. V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, Yu. P. Yakovlev. Opt. Spectrosc., 128 (5), 596 (2020).

    Article  CAS  ADS  Google Scholar 

  13. J. I. Avila, R. J. Matelon, R. Trabol, M. Favre, D. Lederman, U. G. Volkmann, A. L. Cabrera. J. Appl. Phys., 107, 023504 (2010).

    Article  ADS  Google Scholar 

  14. A. Kawasaki, S. Itoh, K. Shima, T. Yamazaki. Mater. Sci. Eng. A, 551, 231 (2012).

    Article  CAS  Google Scholar 

  15. O. V. Konstantinov, V. D. Dymnikov, M. A. Mitsev. Semiconductors, 42 (8), 931 (2008).

    Article  CAS  ADS  Google Scholar 

  16. K. Skucha, Zh. Fan, K. Jeon, A. Javey, B. Boser. Sensors Actuators B, 145, 232 (2010).

    Article  CAS  Google Scholar 

  17. Kh. M. Salikhov, S. V. Slobodchikov, B. V. Russu. SPIE, 3122, 494 (1997).

    ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. A. Shutaev, E. A. Grebenshchikova & Yu. P. Yakovlev

  2. LLC “Independent Business & Scientific Group”, 194021, St. Petersburg, Russia

    V. G. Sidorov

Authors
  1. V. A. Shutaev
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  2. E. A. Grebenshchikova
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  3. V. G. Sidorov
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  4. Yu. P. Yakovlev
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Correspondence to V. A. Shutaev.

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Shutaev, V.A., Grebenshchikova, E.A., Sidorov, V.G. et al. Current Generation in Pd/InP Structures in Hydrogen Medium. Semiconductors 57, 369–372 (2023). https://doi.org/10.1134/S1063782623090166

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  • DOI: https://doi.org/10.1134/S1063782623090166

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