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InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

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Abstract

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

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ACKNOWLEDGMENTS

The paper was partially funded by the Russian Foundation for Basic Research (RFBR), the project no. 20-08-00986.

Funding

The study was partially funded by the Russian Foundation for Basic Research (RFBR) within the framework of the scientific project no. 20-08-00986.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    N. S. Potapovich, M. V. Nakhimovich & V. P. Khvostikov

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  1. N. S. Potapovich
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  2. M. V. Nakhimovich
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  3. V. P. Khvostikov
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Correspondence to V. P. Khvostikov.

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Potapovich, N.S., Nakhimovich, M.V. & Khvostikov, V.P. InGaAsP/InP Photovoltaic Converters for Narrowband Radiation. Semiconductors 57, 611–614 (2023). https://doi.org/10.1134/S1063782623090142

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