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Growth of Hexagonal Boron Nitride (hBN) on Silicon Carbide Substrates by the Physical Vapor Transport Method

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Abstract

The possibility of growing hexagonal boron nitride (hBN) of high structural perfection on hexagonal silicon carbide (SiC) substrates using the physical vapor transport method is demonstrated. The results obtained indicate that this method is promising for the formation of large-area high-quality hBN/SiC heterostructures in the course of one technological process, which have a high potential for device applications.

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ACKNOWLEDGMENTS

The authors express their gratitude to V. A. Soltamov for a fruitful discussion of the results of the study.

Funding

The work was carried out with the support of state assignments of the Ministry of Science and Higher Education of the Russian Federation to Ioffe Institute (0040-2019-0016) and (0040-2019-0006).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    E. N. Mokhov, V. Yu. Davydov, A. N. Smirnov & S. S. Nagaluk

Authors
  1. E. N. Mokhov
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  2. V. Yu. Davydov
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  3. A. N. Smirnov
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  4. S. S. Nagaluk
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Correspondence to V. Yu. Davydov.

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Mokhov, E.N., Davydov, V.Y., Smirnov, A.N. et al. Growth of Hexagonal Boron Nitride (hBN) on Silicon Carbide Substrates by the Physical Vapor Transport Method. Semiconductors 57, 483–487 (2023). https://doi.org/10.1134/S1063782623080092

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  • DOI: https://doi.org/10.1134/S1063782623080092

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