Abstract
Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 105 times. The study is focused on the impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV 40Ar ions in the fluence range (1–4) × 109 ion/cm2. It is shown that taking into account only the generation current component is insufficient to explain the experimental I–V curves. Simulating I–V characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated I–V curves.
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REFERENCES
M. Moll, IEEE Trans. Nucl. Sci. 65, 1561 (2018).
Chiara Grieco, Sebastian Grinstein, Salvador Hidalgo, Giulio Pellegrini, David Quirion, Stefano Terzo, Nucl. Instrum. Meth. A 979, 1 November 2020, 164458.
Development of physics and technology of charged particle accelerators, complier editors B. Yu. Sharkov and I. N. Meshkov (M., RAS, 2021). ISBN 978-5-907366-27-5 (in Russian).
L. V. Grigorenko, B. Y. Sharkov, A. S. Fomichev et al. Physics – Uspekhi 62 (7) (2019). (in Russian).https://doi.org/10.3367/UFNe.2018.07.038387
Material Science with Ion Beams, Topics in Applied Physics, 116 (2010), Harry Bernas Eds. (Springer; Berlin, Germany).
V. Eremin, D. Mitina, A. Fomichev, O. Kiselev, N. Egorov, I. Eremin, A. Shepelev, E. Verbitskaya, J. Instrum. 13, P01019 (2018).
M. Kurokawa, T. Motobayashi, K. Ielu, S. Shimoura, H. Murakami, Y. Ikeda, S. Moriya, Y. Yanagisawa, T. Nomura, IEEE Trans. Nucl. Sci. 42, 163 (1995).
E. Fretwurst, N. Claussen, N. Croitoru, G. Lindstrom, B. Papendick, U. Pein, H. Schatz, T. Schulz, R. Wunstorf, Nucl. Instrum. Meth. A 326, 357 (1993).
J. F. Ziegler, J. P. Biersack, M. D. Ziegler, 2008, The Stopping and Range of Ions in Solids, http://www.srim.org/
Z. Li, H. W. Kraner, IEEE Trans. Nucl. Sci. 38 (2), 244 (1991).
E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, Solid State Electron. 42 (11), 2093 (1998).
S. M. Sze, K. K. Ng, Physics of semiconductor devices, 3rd edition (J. Wiley & Sons, Inc., Hoboken, New Jersey, 2007).
E. Verbitskaya, V. Eremin, I. Ilyashenko, Z. Li, Nucl. Instrum. Meth. A 754, 63 (2014).
Victor Van Lint, Nucl. Instrum. Meth. A 253, 453 (1987).
E. Verbitskaya, V. Eremin, A. Zabrodskii, P. Luukka, J. Instrum. 11, P12012 (2016).
I. Pintilie, G. Lindstrom, A. Junkes, E. Fretwurst, Nucl. Instrum. Meth. A 611, 52 (2009).
Funding
This study was supported by a financial subsistence of the Ministry of Science and Higher Education of Russian Federation (state project 0040-2019-0024).
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Eremin, V.K., Fadeeva, N.N., Mitina, D.D. et al. Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions. Semiconductors 57, 531–538 (2023). https://doi.org/10.1134/S1063782623080043
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DOI: https://doi.org/10.1134/S1063782623080043