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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

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Abstract

The electroluminescent characteristics of the InAs/InAs1–ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. A. Semakova, V. V. Romanov, N. L. Bazhenov, K. D. Mynbaev & K. D. Moiseev

  2. ITMO University, 197101, St. Petersburg, Russia

    M. S. Ruzhevich & K. D. Mynbaev

Authors
  1. A. A. Semakova
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  2. M. S. Ruzhevich
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  3. V. V. Romanov
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  4. N. L. Bazhenov
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  5. K. D. Mynbaev
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  6. K. D. Moiseev
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Correspondence to A. A. Semakova.

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Semakova, A.A., Ruzhevich, M.S., Romanov, V.V. et al. Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement. Semiconductors 57, 263–267 (2023). https://doi.org/10.1134/S1063782623070163

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  • DOI: https://doi.org/10.1134/S1063782623070163

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