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Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

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Abstract

Photoluminescence, Raman spectroscopy and X-ray photoelectron spectroscopy are used to study electronic and atomic structure of n-InP(100) surfaces treated with different sulfide solutions. It is shown that the sulfide treatment causes removal of the native oxide layer from the semiconductor surface and formation of the passivating layer consisting of In–S chemical bonds with the structure dependent on the solution composition and atomic arrangement at the initial surface of the semiconductor. This is accompanied by an increase in photoluminescence intensity and narrowing of the surface depletion layer. Atomic structure of the passivating layer determines the total dipole that modifies the depth distribution of the bands potentials and thus the surface electronic structure.

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ACKNOWLEDGMENTS

The work was performed using the equipment of the Resource Center “Physical methods of surface investigations” of the Scientific Park of St. Petersburg State University.

Funding

The research was supported in part by the Russian Foundation for Basic Research (RFBR) (Project no. 2003-00523). XPS studies were supported financially by the Saint Petersburg State University (project no. 93021679).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. V. Lebedev, T. V. Lvova, A. N. Smirnov & V. Yu. Davydov

  2. St. Petersburg State University, 199034, St. Petersburg, Russia

    A. V. Koroleva, E. V. Zhizhin & S. V. Lebedev

Authors
  1. M. V. Lebedev
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  2. T. V. Lvova
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  3. A. N. Smirnov
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  4. V. Yu. Davydov
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  5. A. V. Koroleva
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  6. E. V. Zhizhin
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  7. S. V. Lebedev
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Correspondence to M. V. Lebedev.

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Lebedev, M.V., Lvova, T.V., Smirnov, A.N. et al. Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces. Semiconductors 57, 244–251 (2023). https://doi.org/10.1134/S1063782623070138

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  • DOI: https://doi.org/10.1134/S1063782623070138

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