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Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

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Abstract

Effect of irradiation with 0.9 MeV electrons on the parameters of 4H-SiC Schottky diodes with a limiting blocking voltage Ub = 600 and 1700 V was studied for the first time in the range of operating temperatures Ti (23 and 175°C). The range of fluences Φ was 1 × 1016–2 × 1016 cm–2 for devices with Ub = 600 V and 5 × 1015–1.5 × 1016 cm–2 for devices with Ub = 1700 V. Irradiation at room temperature increases significantly the differential resistance of the base of the diodes. Irradiation with the same doses at Ti = 175°C—i.e. at limiting operating temperature of devices, does not affect practically the parameters of current–voltage characteristics. Nevertheless, the DLTS spectra demonstrate a significant increase in the concentration of deep levels in the upper half of the band gap not only after irradiation at room temperature, but also after irradiation at Ti = 175°C.

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Funding

This study was carried out under partial financial support of the RSF grant no. 22-12-00003.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. A. Lebedev, M. E. Levinshtein, D. A. Malevsky & R. A. Kuzmin

  2. Peter the Great Saint-Petersburg Polytechnic University, 195251, St. Petersburg, Russia

    V. V. Kozlovski

Authors
  1. A. A. Lebedev
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  2. V. V. Kozlovski
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  3. M. E. Levinshtein
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  4. D. A. Malevsky
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  5. R. A. Kuzmin
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Correspondence to D. A. Malevsky.

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Lebedev, A.A., Kozlovski, V.V., Levinshtein, M.E. et al. Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range. Semiconductors 57, 239–243 (2023). https://doi.org/10.1134/S1063782623070126

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