Abstract
Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered.
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Ivanov, A.M., Klochkov, A.V. Influence of Low Temperature on the Electrophysical and Noise Characteristics of UV LEDs Based on InGaN/GaN Quantum Well Structures. Semiconductors 57, 354–358 (2023). https://doi.org/10.1134/S1063782623070096
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DOI: https://doi.org/10.1134/S1063782623070096