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SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application

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Abstract

A simple method for obtaining SiO2:Ag:Si and Ag:Si hybrid nanostructures is presented. High-temperature annealing of an Ag island film on the surface of c-Si makes it possible to preserve the plasmonic properties of Ag nanoparticles and protect them from external influences by coating them with a thermally grown layer of SiO2. The calculation of the electric field strength distribution in the structure with embedded Ag nanoparticles in c-Si demonstrates the presence of intrinsic “hot spots” at the corners of the nanoparticles, which leads to a maximum enhancement factor (~106) of Raman scattering. A numerical calculation of the dependence of the spectral position of a localized plasmon resonance on the geometry of structures can serve as a basis for their design in the future. Surface-enhanced Raman scattering showed reliable detection of the methyl orange from an aqueous solution at a concentration of <10–5 M.

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ACKNOWLEDGMENTS

The authors are grateful to A.A. Krasilin for discussion of the article materials.

Funding

The paper was supported by the Ministry of Science and Higher Education of the Russian Federation within the framework of the state order no. 0040-2019-0012.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. A. Ermina, K. V. Prigoda, S. I. Pavlov & Yu. A. Zharova

  2. School of Physics and Engineering, ITMO University, 197101, St. Petersburg, Russia

    N. S. Solodovchenko

  3. Peter the Great St. Petersburg Polytechnic University, 195221, St. Petersburg, Russia

    K. V. Prigoda

  4. RnD Center TFTE, 194064, St. Petersburg, Russia

    V. S. Levitskii

Authors
  1. A. A. Ermina
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  2. N. S. Solodovchenko
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  3. K. V. Prigoda
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  4. V. S. Levitskii
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  5. S. I. Pavlov
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  6. Yu. A. Zharova
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Correspondence to Yu. A. Zharova.

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Ermina, A.A., Solodovchenko, N.S., Prigoda, K.V. et al. SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application. Semiconductors 57, 587–593 (2023). https://doi.org/10.1134/S1063782623040061

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