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Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots

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Abstract

The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular-beam epitaxy according to the Stransky–Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.

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Funding

The study of the authors from the A.F. Ioffe Institute of Physics and Technology of the Russian Academy of Sciences was financed by a grant from the Russian Science Foundation no. 22-19-00221, https://rscf.ru/project/22-19-00221/ in terms of design development, epitaxy of heterostructures, TEM studies, study of microphotoluminescence spectra. N.V. Kryzhanovskaya is grateful for the support of the Fundamental Research Program of the National Research University “Higher School of Economics” regarding the analysis of photoluminescence spectra.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. V. Babichev, Yu. S. Tkach, V. N. Nevedomskiy & S. A. Blokhin

  2. Alferov Federal State Budgetary Institution of Higher Education and Science St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. D. Komarov & N. V. Kryzhanovskaya

  3. ITMO University, 190008, St. Petersburg, Russia

    N. V. Kryzhanovskaya

  4. National Research University Higher School of Economics, 197101, St. Petersburg, Russia

    A. G. Gladyshev, L. Ya. Karachinsky & I. I. Novikov

Authors
  1. A. V. Babichev
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  2. S. D. Komarov
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  3. Yu. S. Tkach
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  4. V. N. Nevedomskiy
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  5. S. A. Blokhin
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  6. N. V. Kryzhanovskaya
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  7. A. G. Gladyshev
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  8. L. Ya. Karachinsky
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  9. I. I. Novikov
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Correspondence to A. V. Babichev.

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Babichev, A.V., Komarov, S.D., Tkach, Y.S. et al. Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots. Semiconductors 57, 93–99 (2023). https://doi.org/10.1134/S1063782623040012

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