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Formation of Planar Field-Emission Devices Based on Carbon Nanotubes on Co–Nb–N–(O) Alloy

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Abstract—

Integrated field-emission devices and integrated circuits (ICs) based on them are a promising direction in microelectronics, which is associated with the use of low-voltage and stable field emitters based on nanomaterials, such as carbon nanotubes (CNTs). The planar design of the field-emission device makes it possible to form CNTs at the end of a thin catalyst film 1–50 nm thick. The paper presents the results of the implementation of an integrated technology for manufacturing planar field-emission diodes with a CNT cathode formed at the end of a thin conducting film. The CNTs are grown by chemical-vapor deposition. A thin film of initially amorphous Co–Nb–N–(O) alloy is used as the growth catalyst. A feature of the technology is the crystallization of Co–Nb–N–(O) alloy during heating in the process of chemical-vapor deposition. As a result, Co nanoparticles are formed on the alloy surface, which catalyze the growth of CNTs. It is shown that this specific feature makes it possible to form CNTs locally, only in open areas of the Co–Nb–N–(O) alloy, for example, at the ends of a thin film. The choice of the Co–Nb–N–(O) alloy is substantiated. The stages of formation of planar field-emission diodes on a silicon substrate are described using standard manufacturing processes. The results of measuring the I–V characteristics of devices are presented. It is shown that the type of I–V characteristics is determined by the field emission characteristic of CNTs. The developed technological method for the local synthesis of CNTs at the ends of topologically formed regions of a thin Co–Nb–N–(O) alloy film can be incorporated into an integrated technology for the formation of planar field-emission devices.

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Funding

The work was supported financially by State Agreement 2020–2022 no. FSMR-2020-0018 and the Russian Foundation for Basic Research (Project no. 19-38-90206).

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Authors and Affiliations

  1. National Research University, Moscow Institute of Electronic Technology (MIET), Moscow, Russia

    D. G. Gromov, G. S. Eritsyan, A. I. Savitskiy, S. V. Dubkov, E. D. Grinakovskiy & A. Yu. Trifonov

  2. Sechenov First Moscow State Medical University, Ministry of Health of Russia, Moscow, Russia

    D. G. Gromov

  3. NPK “Technological Center”, Moscow, Russia

    E. P. Kitsyuk, S. N. Skorik, E. D. Grinakovskiy, S. V. Bulyarskiy & V. V. Svetukhin

  4. Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia

    S. V. Bulyarskiy, A. A. Dudin, L. S. Volkova, E. M. Eganova, M. V. Poliakov, A. P. Orlov & G. A. Rudakov

  5. Lukin Research Institute for Physical Problems of the National Research Centre “Kurchatov Institute”, Moscow, Russia

    A. Yu. Trifonov

Authors
  1. D. G. Gromov
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  2. G. S. Eritsyan
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  3. E. P. Kitsyuk
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  4. A. I. Savitskiy
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  5. S. N. Skorik
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  6. S. V. Dubkov
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  7. E. D. Grinakovskiy
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  8. S. V. Bulyarskiy
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  9. A. A. Dudin
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  10. L. S. Volkova
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  11. E. M. Eganova
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  12. A. Yu. Trifonov
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  13. M. V. Poliakov
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  14. A. P. Orlov
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  15. G. A. Rudakov
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  16. V. V. Svetukhin
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Correspondence to A. I. Savitskiy.

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Gromov, D.G., Eritsyan, G.S., Kitsyuk, E.P. et al. Formation of Planar Field-Emission Devices Based on Carbon Nanotubes on Co–Nb–N–(O) Alloy. Semiconductors 56, 493–501 (2022). https://doi.org/10.1134/S1063782622130164

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  • DOI: https://doi.org/10.1134/S1063782622130164

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