Abstract
The main active elements in the frequency range from a few to a hundred gigahertz are still field-effect transistors with a Schottky barrier based on gallium arsenide, other III–V compounds, and various heterostructures on their basis. For optoelectronics, gallium phosphide and its compounds are of great importance. As a rule, these heterostructures are obtained by vapor-phase methods, the use of which requires correct data on the volatile components of a vapor composition. In this study, the composition of arsenic and phosphorus vapor is investigated by the tensometric static method. A mathematical model for the processing of experimental results is constructed. Data on the pressure of superheated arsenic vapor are obtained using a quartz gauge membrane in the range of temperature of 973–1173 K and pressure of 1.3 × 103–1.9 × 104 Pa. As a result of calculations, it is shown that arsenic and phosphorus vapor mainly consists of two- and four-atom molecules. Using more reliable reference data on the As4, As, P4, and P enthalpies and entropies, the corresponding thermodynamic values are determined for As2: \(\Delta H_{{298}}^{0}\) = (178.90 ± 3.77) kJ/mol, \(\Delta S_{{298}}^{0}\) = (227.17 ± 5.44) J/(mol K); and for P2: \(\Delta H_{{298}}^{0}\) = (229.01 ± 3.55) kJ/mol, \(\Delta S_{{298}}^{0}\) = (156.16 ± 0.83) J/(mol K).
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Translated by V. Bukhanov
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Vigdorovich, E.N. Tensometric Studies of the Composition of Arsenic and Phosphorus Vapor. Semiconductors 56, 403–405 (2022). https://doi.org/10.1134/S1063782622130140
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DOI: https://doi.org/10.1134/S1063782622130140