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Investigation of the Chemical Composition of Films Deposited by the Electric-Arc Sputtering of Graphite and Titanium from Two Sources

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Abstract

Carbon films with acceptable emission properties and satisfactory adhesion to a substrate are promising material for making cold cathodes. It is known that inclusions of metallic elements (chromium, titanium, etc.) in a carbon film improve its adhesion to the substrate. One of the methods for producing coatings based on carbon and titanium is the electric-arc sputtering of a Ti/C composite cathode in an argon atmosphere. It should be noted that carbon microparticles in the total plasma flow are the source of structural defects in the growing film. The magnetic separation of carbon plasma solves the above problem. In this study, composite metal–carbon films are obtained by the simultaneous electric-arc sputtering of graphite and titanium in a magnetic field from two evaporators. The composition of the films is studied by Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). It is established that the samples obtained are composite films consisting of graphite nanoparticles, Ti14C13 or Ti8C12 nanoclusters, titanium oxides, and titanium-carbide TiCxN1 – x compounds.

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Authors and Affiliations

  1. Kabardino-Balkarian Scientific Center, Russian Academy of Sciences, 360002, Nalchik, Russia

    Z. M. Khamdokhov, Z. Ch. Margushev & Z. Kh. Kalazhokov

  2. Berbekov Kabardino-Balkarian State University, 360004, Nalchik, Russia

    Z. Kh. Kalazhokov & Kh. Kh. Kalazhokov

  3. National Research University of Electronic Technology (MIET), 124498, Moscow, Russia

    D. D. Levin

Authors
  1. Z. M. Khamdokhov
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  2. Z. Ch. Margushev
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  3. Z. Kh. Kalazhokov
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  4. Kh. Kh. Kalazhokov
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  5. D. D. Levin
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Corresponding author

Correspondence to Z. M. Khamdokhov.

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Translated by V. Bukhanov

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Khamdokhov, Z.M., Margushev, Z.C., Kalazhokov, Z.K. et al. Investigation of the Chemical Composition of Films Deposited by the Electric-Arc Sputtering of Graphite and Titanium from Two Sources. Semiconductors 56, 411–415 (2022). https://doi.org/10.1134/S1063782622130048

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  • DOI: https://doi.org/10.1134/S1063782622130048

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