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Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

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Abstract

Ion implantation is a key technology without alternative for doping silicon carbide SiC in the manufacturing processes of SiC devices. SiC technology has a number of distinctive features in comparison with Si-ion doping technology. This paper provides a systematic analysis of modern technical solutions aimed at the formation of local doped regions by the method of ion implantation for various purposes for SiC-based high-power electronic devices. The results of research conducted at the St. Petersburg State Electrotechnical University LETI are presented. This research is focused on the development and selection of modes of aluminum- and phosphorus-ion implantation into 4H-SiC structures that provide specified concentrations of doping impurities and geometric dimensions of local ion-doped regions. The developed ion-implantation modes are successfully implemented in the manufacture of samples of high-power 4H-SiC metal–insulator–semiconductor (MIS) transistors with operating voltages of up to 1200 V.

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ACKNOWLEDGMENTS

We are grateful to М.V. Chetvergov and K.А. Karabeshkin for carrying out ion-implantation processes on the HVEE-500 implanter and to А.I. Mikhailov for performing the SRIM modeling and participation in discussions of the results.

Funding

This study was supported by the Ministry of Education  and Science of the Russian Federation, project no. 03.G25.31.0243.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia

    A. V. Afanasev, V. A. Ilyin & V. V. Luchinin

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  1. A. V. Afanasev
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  2. V. A. Ilyin
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  3. V. V. Luchinin
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Correspondence to A. V. Afanasev.

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Translated by A. Seferov

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Afanasev, A.V., Ilyin, V.A. & Luchinin, V.V. Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review). Semiconductors 56, 472–486 (2022). https://doi.org/10.1134/S1063782622130024

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