Abstract
The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed.
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REFERENCES
Meng-Lin Lu, Chih-Wei Lai, Hsing-Ju Pan, Chung-Tse Chen, Pi-Tai Chou, and Yang-Fang, Nano Lett. 13, 1920 (2013).
S. Bley, M. Diez, F. Albrecht, S. Resch, S. R. Waldvogel, A. Menzel, M. Zacharies, J. Gutowski, and T. Voss, J. Phys. Chem. C 119, 15627 (2015).
P. Pathak, M. Podzorski, D. W. Bahnemann, and V. Subramanian, J. Phys. Chem. C 122, 13659 (2018).
M. K. Mahato, C. Govind, V. Karunakaran, S. Nandy, C. Sudakar, and E. Prasad, J. Phys. Chem. C 123, 20512 (2019).
A. I. Khrebtov, V. G. Talalaev, P. Werner, V. V. Danilov, M. V. Artemyev, B. V. Novikov, I. V. Shtrom, A. S. Panfutova, and G. E. Cirlin, Semiconductors 47, 1346 (2013).
A. I. Khrebtov, V. G. Talalaev, Yu. B. Samsonenko, P. Werner, V. V. Rutskaya, M. V. Artem’ev, and G. E. Tsyrlin, Tech. Phys. Lett. 40, 558 (2014).
T. Förster, Naturwissensch. 33, 166 (1946).
V. L. Ermolaev, E. N. Bodunov, E. B. Sveshnikova, and T. A. Shakhverdov, Nonradiative Energy Transfer of Electronic Excitation (Nauka, Leningrad, 1977), p. 312 [in Russian].
C. R. Kagan, C. B. Murray, M. Nirmal, and M. G. Bawendi, Phys. Rev. Lett. 76, 1517 (1996).
V. V. Danilov, A. S. Panfutova, G. M. Ermolaeva, A. I. Khrebtov, and V. B. Shilov, Opt. Spectrosc. 114, 880 (2013).
A. S. Kulagina, V. V. Danilov, V. B. Shilov, K. M. Grigorenko, and V. V. Vlasov, Opt. Spectrosc. 123, 164 (2017).
V. V. Danilov, A. S. Kulagina, N. V. Sibirev, A. I. Khrebtov, and V. B. Shilov, Opt. Spectrosc. 125, 716 (2018).
V. V. Danilov, A. S. Kulagina, and N. V. Sibirev, Appl. Opt. 57, 8166 (2018).
E. N. Bodunov, V. V. Danilov, A. S. Panfutova, and A. L. Simões Gamboa, Ann. Phys. (Berlin) 528, 272 (2016).
M. Jones and G. D. Scholes, J. Mater. Chem. 20, 3533 (2010).
D. L. Woodall, A. K. Tobias, and M. Jones, Chem. Phys. 471, 2 (2016).
B. R. Fisher, H. J. Eisler, N. E. Stott, and M. G. Bawendi, J. Phys. Chem. B 108, 143 (2008).
A. F. van Driel, I. S. Nikolaev, P. Vergeer, P. Lodahl, D. Vanmaekelbergh, and W. L. Vos, Phys. Rev. B 75, 035329 (2007).
F. Menezes, A. Fedorov, C. Baleisao, B. Valeur, and M. N. Berberan-Santos, Methods Appl. Fluoresc. 1, 015002 (2013).
H. Xu, V. Chmyrov, J. Widengren, H. Brismar, and Y. Fu, Phys. Chem. Chem. Phys. 17, 27588 (2015).
E. N. Bodunov, Y. A. Antonov, and A. L. Simões Gamboa, J. Chem. Phys. 146, 114102 (2017).
M. S. Smirnov, O. V. Ovchinnikov, and A. S. Perepelitsa, Opt. Spectrosc. 126, 62 (2019).
A. S. Kulagina, A. I. Khrebtov, R. R. Reznik, E. V. Ubyivovk, A. P. Litvin, I. D. Skurlov, G. E. Tsyrlin, E. N. Bodunov, and V. V. Danilov, Opt. Spectrosc. 128, 119 (2020).
A. I. Khrebtov, R. R. Reznik, E. V. Ubyivovk, A. P. Litvin, I. D. Skurlov, P. S. Parfenov, A. S. Kulagina, V. V. Danilov, and G. E. Cirlin, Semiconductors 53, 1258 (2019).
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, D. A. Kirilenko, and N. V. Kryzhanovskaya, Semiconductors 52, 1416 (2018).
L. K. Vugt, S. J. Veen, E. P. A. M. Bakkers, A. L. Roest, and D. Vanmaekelbergh, J. Am. Chem. Soc. 127, 12357 (2005).
B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, and T. Fukui, Appl. Phys. Lett. 93, 073105 (2008).
J. Lorenz and A. B. Ellis, J. Am. Chem. Soc. 120, 10970 (1998).
K. E. Knowles, D. B. Tice, E. A. McArthur, C. G. Solomon, and E. A. Weiss, J. Am. Chem. Soc. 132, 1041 (2010).
E. S. Williams, K. J. Major, A. Tobias, D. Woodall, V. Morales, C. Lippincott, P. J. Moyer, and M. Jones, J. Phys. Chem. C 117, 4227 (2013).
E. N. Bodunov and A. L. Simoes Gamboa, J. Phys. Chem. C 123, 25515 (2019).
Funding
The part of the study concerned with the synthesis of samples was supported by the Ministry of Education and Science of the Russian Federation, government order. The part of the study concerned with spectroscopic measurements was supported by the Russian Science Foundation, project no. 19-72-30010. The part of the study concerned with recording steady-state PL spectra was supported by the Russian Foundation for Basic Research, project no. 18-32-00980 mol_a.
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Translated by E. Smorgonskaya
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Khrebtov, A.I., Kulagina, A.S., Danilov, V.V. et al. Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots. Semiconductors 54, 1141–1146 (2020). https://doi.org/10.1134/S1063782620090158
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DOI: https://doi.org/10.1134/S1063782620090158