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Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb–p-Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

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REFERENCES

  1. S. Zainabidinov, I. G. Tursunov, and O. Khimmatkulov, Semiconductors 52, 896 (2018).

    Article  Google Scholar 

  2. S. Zainabidinov, O. Mamatkarimov, I. G. Tursunov, and O. Khimmatkulov, Ukr. J. Phys. 62, 957 (2017).

    Article  Google Scholar 

  3. A. A. Polyakova, Deformation of Semiconductors and Semiconductor Devices (Energiya, Moscow, 1972), Chap. 2, p. 34 [in Russian].

    Google Scholar 

  4. M. K. Bakhadyrkhanov, K. S. Ayupov, G. H. Mavlyanov, and S. B. Isamov, Semiconductors 44, 1145 (2010).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Namangan Institute of Engineering and Technology, Kasansai str. 7, 160115, Namangan, Uzbekistan

    O. O. Mamatkarimov

  2. Tashkent State Technical University named after Islam Karimov, University str. 2, 100174, Tashkent, Uzbekistan

    O. Khimmatkulov

  3. Chirchik State Pedagogical Institute, Amir Temur Str. 104, 100700, Chirchik, Uzbekistan

    I. G. Tursunov

  4. National University of Uzbekistan, University str. 4, 100174, Tashkent, Uzbekistan

    I. G. Tursunov

Authors
  1. O. O. Mamatkarimov
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  2. O. Khimmatkulov
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  3. I. G. Tursunov
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Corresponding author

Correspondence to O. O. Mamatkarimov.

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The authors declare that they have no conflict of interest.

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Translated by A. Kazantsev

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Mamatkarimov, O.O., Khimmatkulov, O. & Tursunov, I.G. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes. Semiconductors 54, 563–566 (2020). https://doi.org/10.1134/S1063782620050085

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  • DOI: https://doi.org/10.1134/S1063782620050085

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