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Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.

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REFERENCES

  1. I. P. Smorchkova, S. Keller, S. Heikman, C. R. Elsass, B. Heying, P. Fini, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 3998 (2000).

    Article  ADS  Google Scholar 

  2. K. Shinohara, D. C. Regan, Y. Tang, A. L. Corrion, D. F. Brown, J. C. Wong, J. F. Robinson, H. H. Fung, A. Schmitz, T. C. Oh, S. J. Kim, P. S. Chen, R. G. Nagele, A. D. Margomenos, and M. Micovic, IEEE Trans. Electron Dev. 60, 2982 (2013).

    Article  ADS  Google Scholar 

  3. A. S. A. Fletcher and D. Nirmal, Superlatt. Microstruct. 109, 519 (2017).

    Article  ADS  Google Scholar 

  4. Y. Cai, Z. Cheng, Z. Yugang, and K. J. Chen, IEEE Electron. Dev. Lett. 53, 2207 (2006).

    Article  Google Scholar 

  5. L. Shen, S. Heikman, B. Moran, R. Coffie, N. Znanag, D. Buttari, I. P. Smorchkora, S. Keller, S. P. DenBars, and U. K. Mishra, IEEE Electron. Dev. Lett. 22, 457 (2001).

    Article  ADS  Google Scholar 

  6. Y. Ohno and M. Kuzuhera, IEEE Trans. Electron. Dev. 48, 517 (2001).

    Article  ADS  Google Scholar 

  7. L. Ravikiran, N. Dharmarasu, K. Radhakrishnan, M. Agrawal, L. Yiding, S. Arulkumaran, S. Vicknesh, and G. I. Ng, J. Appl. Phys. 117, 025301 (2015).

    Article  ADS  Google Scholar 

  8. Wei Hang Zhang, Jun Shuai Xue, Li Zhang, Tao Zhang, Zhi Yu Lin, Jin Cheng Zhang, and Yue Hao, Appl. Phys. Lett. 110, 252102 (2017).

    Article  ADS  Google Scholar 

  9. J. L. Cazaux, G. I. Ng, D. Pavlidis, and H. F. Chau, IEEE Trans. Electron Dev. 35, 1223 (1988).

    Article  ADS  Google Scholar 

  10. Ma Juncai, Z. Jincheng, X. Junshuai, Lin. Zhiyu, Liu Ziyang, Xue Xiao Yong, Ma Xiaohua, and Hao Yue, J. Semicond. 33, 014002 (2012).

    Article  Google Scholar 

  11. D. C. Yu and I. M. Abdel-Motaleb, Solid State Electron. 34, 467 (1991).

    Article  ADS  Google Scholar 

  12. A. Kamath, T. Patil, R. Adari, I. Bhattacharya, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, and Dipankar Saha, IEEE Trans. Electron. Dev. 33, 1690 (2012).

    Article  Google Scholar 

  13. Jun Luo, Sheng-Lei Zhao, Min-Han Mi, Wei-Wei Chen, Bin Hou, Jin-Cheng Zhang, Xiao-Hua Ma, and Yue Hao, Chin. Phys. B 25, 027303 (2016).

    Article  ADS  Google Scholar 

  14. Lu Zhang, Xiaoliang Wang, Hongling Xiao, Hong Chen, Chun Feng, Guangdi Shen, Zhanguo Wang, and Xun Hou, Eur. Phys. J. Appl. Phys. 62, 20105 (2013).

    Article  ADS  Google Scholar 

  15. A. Bakar Khan, Dr. Mohammad Jawaid Siddiqui, and S. Gulraze Anjum, Mater. Today Proc. 4, 10341 (2017).

    Article  Google Scholar 

  16. N. Chugh, M. Bhattacharya, M. Kumar, S. S. Deswal, and R. S. Gupta, J. Comput. Electron. 17, 1229 (2018).

    Article  Google Scholar 

  17. N. Chugh, M. Kumar, M. Bhattacharya, and R. S. Gupta, Microsyst. Technol. (2019, in press). https://doi.org/10.1007/s00542-019-04322-5

  18. ATLAS 2D Device Simulator (Silvaco Int., 2016).

  19. R. K. Tyagi, A. Ahlawat, M. Pandey, and S. Pandey, Microelectron. J. 39, 1634 (2008).

    Article  Google Scholar 

  20. M. Bhattacharya, J. Jogi, R. S. Gupta, and M. Gupta, in Proceedings of ICSSA, Gujarat, India,2011, p. 497.

  21. S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J. C. de Jaeger, M. Renvoise, and P. Frijlink, IEEE Electron Dev. Lett. 34, 36 (2013).

    Article  ADS  Google Scholar 

  22. S. P. Kumar, A. Agrawal, S. Kabra, M. Gupta, and R. S. Gupta, Microelectronics 37, 1339 (2006).

    Article  Google Scholar 

  23. O. Ambacher, J. Smart, J. R. Shealy, N. G. Wiemann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).

    Article  ADS  Google Scholar 

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ACKNOWLEDGMENTS

The authors would like to thank Defence Research and Development Organisation (DRDO), Ministry of Defence (Govt. of India) for providing the necessary financial assistance under the grant ERIP/P/ER/DG-Med and CoS/991115506/M/01/1663 to carry out this research work.

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Authors and Affiliations

  1. University School of Information, Communication and Technology, Guru Gobind Singh Indraprastha University, 110078, Dwarka, New Delhi, India

    Nisha Chugh & Manoj Kumar

  2. Department of Electronics, Acharya Narendra Dev College, 110019, Kalkaji, New Delhi, India

    Monika Bhattacharya

  3. Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Sector-22, 110086, Rohini, New Delhi, India

    R. S. Gupta

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  1. Nisha Chugh
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  2. Manoj Kumar
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Correspondence to Nisha Chugh, Manoj Kumar, Monika Bhattacharya or R. S. Gupta.

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Chugh, N., Kumar, M., Bhattacharya, M. et al. Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications. Semiconductors 53, 1784–1791 (2019). https://doi.org/10.1134/S1063782619130050

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  • DOI: https://doi.org/10.1134/S1063782619130050

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