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Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 × 1017 cm–3, 1 × 1018 cm–3, 3 × 1018 cm–3 and 6 × 1018 cm–3, in GaN barriers is investigated. Increasing Si-doping concentration leads to better transport property, resulting in smaller series resistance (Rs). However, the crystal quality degrades when Si-doping concentration is over 1 × 1018 cm–3, which reduces the external quantum efficiency, short circuit current density and open circuit voltage. As a result, the sample with a slight Si-doping concentration of 4 × 1017 cm–3 exhibits the highest conversion efficiency.

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Funding

This study was supported by the National Natural Science Foundation of China and Research Start-up Program of Xidian University (grant no. 10251180017).

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Xidian University, 710071, Xi’an, China

    Xin Chen

  2. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, 510631, Guangzhou, China

    Bijun Zhao & Shuti Li

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  1. Xin Chen
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Correspondence to Xin Chen.

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Chen, X., Zhao, B. & Li, S. Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells. Semiconductors 53, 1792–1796 (2019). https://doi.org/10.1134/S1063782619130049

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  • DOI: https://doi.org/10.1134/S1063782619130049

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