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Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB

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Abstract

The work presents experimental data of Ga+ focused ion beam etching of disc and ring patterns in Si3N4/GaN structure. The reasons for the difference in etching depth between the discs and the rings are described.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin & V. P. Evtikhiev

  2. SHM R and E Center, Russian Academy of Sciences, St. Petersburg, Russia

    A. F. Tsatsulnikov

Authors
  1. M. I. Mitrofanov
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  2. G. V. Voznyuk
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  3. S. N. Rodin
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  4. W. V. Lundin
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  5. V. P. Evtikhiev
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  6. A. F. Tsatsulnikov
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Corresponding authors

Correspondence to M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev or A. F. Tsatsulnikov.

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Mitrofanov, M.I., Voznyuk, G.V., Rodin, S.N. et al. Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB. Semiconductors 53, 2100–2102 (2019). https://doi.org/10.1134/S1063782619120170

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  • DOI: https://doi.org/10.1134/S1063782619120170

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