Abstract
In this work, we account the local variations of nanowire number density to extend the previous approaches to modeling of III–V nanowire length distributions in lithography-free self-catalyzed growth processes. We calculate the growth rate controlled by the re-evaporation of group V atoms from the substrate and derive the analytical expressions for length distributions in irregular arrays of nanowires. The obtained theoretical results fit well the experimentally observed statistics of self-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si/SiOx substrates.
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Funding
The work is supported by the Ministry of Education and Science of the Russian Federation for financial support under grant 14.587.21.0040 (project ID RFMEFI58717X0040).
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Berdnikov, Y., Sibirev, N.V. & Koryakin, A. Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires. Semiconductors 53, 2068–2071 (2019). https://doi.org/10.1134/S1063782619120066
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DOI: https://doi.org/10.1134/S1063782619120066