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Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

Attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R* and effective lifetime of amorphous silicon (a-Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a-Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a-Si:H films with R* close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.

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Authors and Affiliations

  1. R and D Center of Thin Film Technologies in Energetics, 194064, St. Petersburg, Russia

    S. N. Abolmasov, A. S. Abramov, A. V. Semenov & E. I. Terukov

  2. Ioffe Physicotechnical Institute, 194021, St. Petersburg, Russia

    A. S. Abramov, E. I. Terukov, E. V. Malchukova & I. N. Trapeznikova

  3. Hevel LLC, 117342, Moscow, Russia

    I. S. Shakhray

  4. Saint-Petersburg Electrotechnical University, 197376, St. Petersburg, Russia

    E. I. Terukov

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  1. S. N. Abolmasov
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Correspondence to S. N. Abolmasov.

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Abolmasov, S.N., Abramov, A.S., Semenov, A.V. et al. Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass. Semiconductors 53, 1114–1119 (2019). https://doi.org/10.1134/S1063782619080244

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