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Some Physical Properties of the New Intermetallic Compound NbCd2

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

Solid solutions of cadmium in niobium and NbCd2 phase are formed by magnetron sputtering and coprecipitation on substrates moving relative to the flow of Nb and Cd particles. The NbCd2 phase can be described by a tetragonal unit cell with the parameters a = 0.84357 nm, c = 0.54514 nm, and c/a = 0.6426. A very high hole concentration in NbCd2 is established by studying the coating absorption and transmission spectra corresponding to the intermetallic-compound composition near the fundamental absorption edge, determining the band gap, and measuring the carrier mobility. Such a concentration is characteristic of a strongly degenerate semiconductor or metal. The band gap is determined to be 1.26 eV. The variation in the concentration of carriers and their mobility depending on the cadmium concentration in coatings of the Nb–Cd system confirms the occurrence of the NbCd2 phase.

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Funding

This work was supported by the Committee of Science of the Ministry of Education and Science of the Republic of Kazakhstan, projects nos. AR05132506, AR05130933/GF5, and AR05130967/GF5.

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Authors and Affiliations

  1. Institute of Nuclear Physics, 050032, Almaty, Kazakhstan

    V. N. Volodin, Y. Zh. Tuleushev, E. A. Zhakanbaev & A. A. Migunova

  2. AO “Institute of Metallurgy and Ore Beneficiation”, 050010, Almaty, Kazakhstan

    V. N. Volodin & A. B. Nicenko

  3. Al-Farabi Kazakh National University, 050013, Almaty, Kazakhstan

    A. A. Migunova

Authors
  1. V. N. Volodin
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  2. Y. Zh. Tuleushev
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  3. E. A. Zhakanbaev
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  4. A. A. Migunova
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  5. A. B. Nicenko
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Corresponding author

Correspondence to Y. Zh. Tuleushev.

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The authors state that they have no conflict of interest.

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Translated by N. Korovin

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Volodin, V.N., Tuleushev, Y.Z., Zhakanbaev, E.A. et al. Some Physical Properties of the New Intermetallic Compound NbCd2. Semiconductors 53, 1028–1032 (2019). https://doi.org/10.1134/S1063782619080219

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  • DOI: https://doi.org/10.1134/S1063782619080219

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