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Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures

  • MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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Abstract

The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

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Funding

The work was performed as a part of the State Task of the SSC of the Russian Academy of Sciences for 2019 (project state registration no. 01201354240), state contract no. 16.4757.2017/(8.9), and was also supported by the Russian Foundation for Basic Research, project no. 17-08-01206 A.

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Authors and Affiliations

  1. Federal Research Center Southern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, Russia

    M. L. Lunina, L. S. Lunin, D. L. Alfimova, A. S. Pashchenko & E. M. Danilina

  2. Platov South-Russian State Polytechnic University (SRSTU (NPI)), 346400, Novocherkassk, Russia

    L. S. Lunin & V. V. Nefedov

Authors
  1. M. L. Lunina
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  2. L. S. Lunin
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  3. D. L. Alfimova
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  4. A. S. Pashchenko
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  5. E. M. Danilina
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  6. V. V. Nefedov
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Corresponding author

Correspondence to L. S. Lunin.

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Translated by V. Bukhanov

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Lunina, M.L., Lunin, L.S., Alfimova, D.L. et al. Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures. Semiconductors 53, 1088–1091 (2019). https://doi.org/10.1134/S1063782619080141

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  • DOI: https://doi.org/10.1134/S1063782619080141

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