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Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films

  • XVI INTERNATIONAL CONFERENCE  “THERMOELECTRICS AND THEIR APPLICATIONS–2018” (ISCTA 2018), ST. PETERSBURG, OCTOBER 8–12, 2018
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Abstract

The thermoelectric properties in the temperature range 4.2–300 K and magnetoresistance oscillations in strong magnetic fields at low temperatures are studied in nanostructured layered films of topological thermoelectric materials n-Bi2 –xSbxTe3 –ySey. It is shown that the thermoelectric figure of merit in layered n-Bi2 –xSbxTe3 –ySey films is larger than that in the bulk material due both to an increase in the Seebeck coefficient below room temperature and to a decrease in the thermal conductivity and its weaker temperature dependence. Analysis of the magnetoresistance oscillations is used to determine the parameters of the topological surface states of Dirac fermions and estimate their influence on the thermoelectric properties.

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FUNDING

The study was financially supported by the Russian Foundation for Basic Research (project no. 16-08-00478).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    L. N. Lukyanova, O. A. Usov & M. P. Volkov

Authors
  1. L. N. Lukyanova
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  2. O. A. Usov
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  3. M. P. Volkov
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Correspondence to L. N. Lukyanova.

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Translated by M. Tagirdzhanov

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Lukyanova, L.N., Usov, O.A. & Volkov, M.P. Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films. Semiconductors 53, 620–623 (2019). https://doi.org/10.1134/S1063782619050154

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  • DOI: https://doi.org/10.1134/S1063782619050154

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