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On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    S. Yu. Davydov

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  1. S. Yu. Davydov
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Correspondence to S. Yu. Davydov.

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Translated by E. Smorgonskaya

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Davydov, S.Y. On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes. Semiconductors 53, 699–702 (2019). https://doi.org/10.1134/S106378261905004X

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  • DOI: https://doi.org/10.1134/S106378261905004X

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