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Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon

  • NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
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Abstract

The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.

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ACKNOWLEDGMENTS

The research is carried out within the state task of IMT (no. 075-00475-19-00) and ISSP, Russian Academy of Sciences.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

    V. I. Orlov, N. A. Yarykin & E. B. Yakimov

  2. Institute of Solid-State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

    V. I. Orlov

  3. National University of Science and Technology “MISiS”, 119049, Moscow, Russia

    E. B. Yakimov

Authors
  1. V. I. Orlov
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  2. N. A. Yarykin
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  3. E. B. Yakimov
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Correspondence to V. I. Orlov.

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Translated by E. Smorgonskaya

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Orlov, V.I., Yarykin, N.A. & Yakimov, E.B. Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon. Semiconductors 53, 411–414 (2019). https://doi.org/10.1134/S1063782619040225

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  • DOI: https://doi.org/10.1134/S1063782619040225

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