Abstract
It is established experimentally that noticeable changes in the I–V characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 1015 cm–2. The currents in the forward and reverse branches of the I–V characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the I–V characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 1015 cm–2. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 1015 cm–2.
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REFERENCES
W. J. Choyke, Inst. Phys. Conf. Ser. 31, 58 (1977).
KK. Asano, Y. Sugawara, A. Tanaka, Y. Miyanagi, K. Nakayama, Sh. Ogata, Sh. Okada, T. Izumi, and R. Ishii, in Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC’s, Orlando, FL, 2008, p. 256.
E. I. Shabunina, M. E. Levinshtein, N. M. Shmidt, P. A. Ivanov, and J. W. Palmour, Solid State Electron. 96, 44 (2014).
P. Hazdra and S. Popelka, in Proceedings of the 2016 European Conference on Silicon Carbide and Related Materials, Halkidiki, Greece, 2016, Vol. 897, p. 463.
A. A. Lebedev, K. S. Davydovskaya, V. V. Kozlovski, O. Korolkov, N. Sleptsuk, and J. Toompuu, in Proceedings of the 2016 European Conference on Silicon Carbide and Related Materials, Halkidiki, Greece, 2016, Vol. 897, p. 447.
V. V. Kozlovski, A. A. Lebedev, M. E. Levinshtein, S. L. Rumyantsev, and J. W. Palmour, Appl. Phys. Lett. 110, 083503 (2017).
V. V. Kozlovski, A. A. Lebedev, M. E. Levinshtein, S. L. Rumyantsev, and J. W. Palmour, Appl. Phys. Lett. 110, 133501 (2017).
A. van der Ziel, Noise in Measurements (Wiley, Chichester, 1976).
A. V. Kirillov and S. A. Kornilov, Elektron. Tekh., Ser. Elektron. SVCh, No. 3, 62 (1975).
E. I. Adirovich, P. M. Karageorgii-Alkalaev, and A. Yu. Leiderman, Double Injection Currents in Semiconductors (Sov. Radio, Moscow, 1978) [in Russian].
S. Bellone, F. G. della Corte, L. F. Albanese, and F. Pezzimenti, IEEE Trans. Power Electron. 26, 2835 (2011).
M. Sze, The Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 1.
N. Camara, E. Bano, and K. Zekentes, Mater. Sci. Forum 457–460, 1017 (2004).
Physical Processes in Irradiated Semiconductors, Ed. by L. S. Smirnov (Nauka, Novosibirsk, 1977) [in Russian].
V. G. Litovchenko and B. N. Romanyuk, Sov. Phys. Semicond. 17, 95 (1983).
G. P. Zhigal’skii, Fluctuations and Noise in Electronic Solid-State Devices (Fizmatlit, Moscow, 2012), p. 88 [in Russian].
V. M. Malyshev and V. G. Usychenko, Izv. Vyssh. Uchebn. Zaved., Radiofiz. 32, 632 (1989).
S. Bychikhin, D. Poganya, L. K. J. Vandamme, G. Meneghesso, and E. Zanoni, J. Appl. Phys. 97, 123 (2005).
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Dobrov, V.A., Kozlovski, V.V., Mescheryakov, A.V. et al. Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes. Semiconductors 53, 545–551 (2019). https://doi.org/10.1134/S1063782619040080
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DOI: https://doi.org/10.1134/S1063782619040080