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Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In0.2Ga0.8As/In0.2Al0.8As quantum wells (0.7 eV for Γ electrons) with different metamorphic buffer designs are implemented and investigated for the first time. The electronic properties of metamorphic and pseudomorphic HEMT structures with the same doping are compared. It is found that, over a temperature range of 4–300 K, both the electron mobility and concentration in the HEMT structure with a linear metamorphic buffer are higher than those in the pseudomorphic HEMT structure due to an increase in the depth of the quantum well. Low-temperature magnetotransport measurements demonstrate that the quantum momentum-relaxation time decreases considerably in metamorphic HEMT structures because of enhanced small-angle scattering resulting from structural defects and inhomogeneities, while the dominant scattering mechanism in structures of both types is still due to remote ionized impurities.

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REFERENCES

  1. S. Chaturvedi, S. L. Badnikar, and A. A. Naik, in Proceedigns of the 2017 IEEE MTT-S International Microwave and RF Conference, Ahmedabad, India, 2017.

  2. K. Wang, Y. Yan, and X. Liang, in Proceedigns of the 2018 IEEE MTT-S International Wireless Symposium, Chengdu, China, 2018.

  3. T. Paul, M. Harinath, and S. K. Garg, in Proceedigns of the 2017 IEEE MTT-S International Microwave and RF Conference, Ahmedabad, India, 2017.

  4. M. Kasu, S. Fujita, and A. Sasaki, J. Appl. Phys. 66, 3042 (1989).

    Article  ADS  Google Scholar 

  5. N. Chand, T. Henderson, J. Klem, W. Ted Masselink, R. Fischer, Y.-C. Chang, and H. Morkoc, Phys. Rev. B 30, 4481 (1984).

    Article  ADS  Google Scholar 

  6. M. E. Rudinsky, S. Yu. Karpov, H. Lipsanen, and A. E. Romanov, Mater. Phys. Mech. 24, 278 (2015).

    Google Scholar 

  7. H. Sari and H. H. Wieder, J. Appl. Phys. 85, 3380 (1999).

    Article  ADS  Google Scholar 

  8. P. M. Mooney, J. Appl. Phys. 67, R1 (1990).

    Article  ADS  Google Scholar 

  9. A. Malinin, H. Tomozawa, T. Hashizume, and H. Hasegawa, Jpn. J. Appl. Phys. 34, 1138 (1995).

    Article  ADS  Google Scholar 

  10. S. Adachi, Physical Properties of III–V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, Chichester, UK, 1992).

    Book  Google Scholar 

  11. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

    Article  ADS  Google Scholar 

  12. I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, V. G. Mokerov, S. S. Shirokov, R. M. Imamov, and I. A. Subbotin, Semiconductors 42, 1084 (2008).

    Article  ADS  Google Scholar 

  13. R. T. Webster, S. Wu, and A. F. M. Anwar, IEEE Electron Dev. Lett. 21, 193 (2000).

    Article  ADS  Google Scholar 

  14. G. Berthold, E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S. R. Bahl, and J. A. del Alamo, IEEE Trans. Electron Dev. 42, 752 (1995).

    Article  ADS  Google Scholar 

  15. K. Kalna and A. Asenov, Solid-State Electron. 48, 1223 (2004).

    Article  ADS  Google Scholar 

  16. P. Win, Y. Cordier, Y. Druelle, C. Bouillet, J. Favre, and A. Cappy, Microelectron. Eng. 19, 317 (1992).

    Article  Google Scholar 

  17. V. A. Kulbachinskii, L. N. Oveshnikov, R. A. Lunin, N. A. Yuzeeva, G. B. Galiev, E. A. Klimov, and P. P. Mal’tsev, Semiconductors 49, 199 (2015).

    Article  ADS  Google Scholar 

  18. N. A. Yuzeeva, A. V. Sorokoumova, R. A. Lunin, L. N. Oveshnikov, G. B. Galiev, E. A. Klimov, D. V. Lavruchin, and V. A. Kulbachinskii, J. Low Temp. Phys. 185, 701 (2016).

    Article  ADS  Google Scholar 

  19. E. Diez, Y. P. Chen, S. Avesque, M. Hilke, E. Peled, D. Shahar, J. M. Cervero[acute], D. L. Sivco, and A. Y. Cho, Appl. Phys. Lett. 88, 052107 (2006).

    Article  ADS  Google Scholar 

  20. D. Yu. Protasov and K. S. Zhuravlev, Solid-State Electron. 129, 66 (2017).

    Article  ADS  Google Scholar 

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ACKNOWLEDGMENTS

This study was performed in the framework of State assignment (no. 8.3887.2017/PCh).

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI”, 115409, Moscow, Russia

    A. N. Vinichenko, D. A. Safonov, N. I. Kargin & I. S. Vasil’evskii

Authors
  1. A. N. Vinichenko
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  2. D. A. Safonov
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  3. N. I. Kargin
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  4. I. S. Vasil’evskii
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Corresponding author

Correspondence to D. A. Safonov.

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Translated by M. Skorikov

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Vinichenko, A.N., Safonov, D.A., Kargin, N.I. et al. Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells. Semiconductors 53, 339–344 (2019). https://doi.org/10.1134/S1063782619030205

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  • DOI: https://doi.org/10.1134/S1063782619030205

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