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Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

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Abstract

Unlike the conventional GaAs- and InP-based enhancement/depletion-mode (E/D-mode) transistors, the improved gate characteristics of the AlGaAs/InGaAs E-mode high electron mobility transistors (HEMTs) by way of hybrid gate recesses to remove the n-AlAs/i-GaAs/n-AlGaAs virtual channel layers upon 2DEG channels are demonstrated. As compared to the D-mode device (sample A), the gate reverse currents are effectively reduced by 45 and 102 times for the E-mode devices with additional gate recess time of 24 s (sample B) and 30 s (sample C) to remove part of the virtual channel layers, respectively. Under gate forward bias, the hybrid gate recesses also enable the gate turn-on voltages to increase. Furthermore, the threshold voltages of –1.25, 0.09, and 0.22 V are observed in the samples A, B, and C, respectively. The maximum transconductances of 187.3, 209.2, and 243.4 mS/mm and saturation current density of 482.8, 410.6, and 347.4 mA/mm are obtained in the samples A, B, and C, respectively.

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ACKNOWLEDGMENTS

This work is supported by the Ministry of Science and Technology of the Republic of China under Contract nos. MOST 104-2221-E-017-007-MY2 and MOST 106-2221-E-017-011.

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Authors and Affiliations

  1. Department of Electronic Engineering, National Kaohsiung Normal University, 802, Kaohsiung, Taiwan

    Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou & Jing-Shiuan Niu

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  1. Jung-Hui Tsai
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  2. Pao-Sheng Lin
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  3. Yu-Chi Chen
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  4. Syuan-Hao Liou
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  5. Jing-Shiuan Niu
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Correspondence to Jung-Hui Tsai.

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Tsai, JH., Lin, PS., Chen, YC. et al. Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches. Semiconductors 53, 406–410 (2019). https://doi.org/10.1134/S1063782619030187

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  • DOI: https://doi.org/10.1134/S1063782619030187

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