Abstract
The simulations of recently discovered effect of subnanosecond avalanche switching of Si n+−n−n+-structures have been performed. The electric field in n+−n−n+-structure is shown to remain quasi-uniform along the current flow direction during the voltage rise stage and it reaches the effective threshold of impact ionization of ~200 kV/cm in the whole n-base. Comparing simulation results with experiments we argue that the field distribution is as well uniform in the transverse direction. Hense, the ultrafast avalanche transient develops quasi-uniformly in the whole n-base volume. The switching time is about ~150 ps. We compare numerical results obtained for various impact ionization models and estimate parameters of the initial voltage pulse that are required for ultrafast avalanche switching of n+−n−n+-structures.
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ACKNOWLEDGMENTS
We thank V.I. Brylevskiy, I.V. Grekhov, and I.A. Smirnova for numerous useful discussions and help. This study was supported by the Russian Science Foundation, project no. 14-29-00094.
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Translated by N. Korovin
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Podolska, N.I., Rodin, P.B. Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures. Semiconductors 53, 379–384 (2019). https://doi.org/10.1134/S1063782619030151
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DOI: https://doi.org/10.1134/S1063782619030151