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Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)

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Abstract

Transient process in a resistor–capacitor (RC) circuit with a reverse-biased 4H-SiC p–n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4H-SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.

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ACKNOWLEDGMENTS

The study was financially supported by the Russian Science Foundation (project no. 14-29-00094).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    P. A. Ivanov, A. S. Potapov & T. P. Samsonova

Authors
  1. P. A. Ivanov
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  2. A. S. Potapov
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  3. T. P. Samsonova
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Correspondence to P. A. Ivanov.

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Translated by M. Tagirdzhanov

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Ivanov, P.A., Potapov, A.S. & Samsonova, T.P. Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package). Semiconductors 53, 385–387 (2019). https://doi.org/10.1134/S1063782619030072

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  • DOI: https://doi.org/10.1134/S1063782619030072

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