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MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28–1.31 μm and can be controlled by varying the growth temperature and the number of QD-deposition cycles. The highest QD surface density is 3 × 1010 cm–2. Structures with 1–3 QD layers and spacer layers 5–12 nm thick between them are grown. The spacer layers (as well as the cap layers) are selectively doped with carbon (acceptor). It is established that the QD photoluminescence is characterized by an enhanced degree of polarization in the direction orthogonal to the structure plane. This should favor their use for the excitation of surface plasmon–polaritons in Schottky light-emitting diodes.

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ACKNOWLEDGMENTS

This study was supported by the Russian Foundation for Basic Research, project no. 16-02-00450-a using the instrumental base of the Center for Collective Use of the Scientific–Educational Center “Physics of Solid Nanostructures” of Lobachevsky Nizhny Novgorod State University.

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Authors and Affiliations

  1. Research Physical-Technical Institute, Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    N. V. Baidus, S. M. Nekorkin & A. V. Kruglov

  2. Institute of Applied Physics, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    V. A. Kukushkin

  3. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    V. A. Kukushkin, A. V. Kruglov & D. G. Reunov

Authors
  1. N. V. Baidus
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  2. V. A. Kukushkin
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  3. S. M. Nekorkin
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  4. A. V. Kruglov
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  5. D. G. Reunov
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Correspondence to V. A. Kukushkin.

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Translated by V. Bukhanov

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Baidus, N.V., Kukushkin, V.A., Nekorkin, S.M. et al. MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons. Semiconductors 53, 326–331 (2019). https://doi.org/10.1134/S1063782619030047

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  • DOI: https://doi.org/10.1134/S1063782619030047

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