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FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy

  • 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
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Abstract

Our study describes FIB technological aspects of preparing mask for GaN selective area epitaxy on Si3N4/GaN template.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. I. Mitrofanov, I. V. Levitskii, S. N. Rodin, W. V. Lundin & V. P. Evtikhiev

  2. ITMO University, 197101, Saint Petersburg, Russia

    G. V. Voznyuk & E. E. Tatarinov

  3. SHM RE Center, RAS, St. Petersburg, Russia

    M.N. Mizerov

Authors
  1. M. I. Mitrofanov
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  2. I. V. Levitskii
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  3. G. V. Voznyuk
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  4. E. E. Tatarinov
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  5. S. N. Rodin
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  6. W. V. Lundin
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  7. V. P. Evtikhiev
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  8. M.N. Mizerov
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Corresponding author

Correspondence to M. I. Mitrofanov.

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Mitrofanov, M.I., Levitskii, I.V., Voznyuk, G.V. et al. FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy. Semiconductors 52, 2114–2116 (2018). https://doi.org/10.1134/S1063782618160212

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  • DOI: https://doi.org/10.1134/S1063782618160212

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