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XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Si

  • 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
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Abstract

The single crystal CZ n-Si(100) substrates with electron concentration no = 5 × 1016 cm−3 were implanted by 64Zn+ ions with dose of 5 × 1016 cm−2 and energy of 50 keV. During implantation the ion beam current density was less than 0.5 μA/cm2 to avoid the substrate magnetically heating. After implantation, the plates were subjected to isochronous for one hour heat treatment in oxygen atmosphere at temperatures from 400 up to 1000oC with a step of 100oC. Zn K-edge EXAFS spectra were measured in fluorescent mode. Si(111) channel-cut monochromator was used for energy scanning; energy resolution ΔE/E = 2 × 10–4. According to Zn K-edge EXAFS data, all Zn implanted in Si at 900oC is fully oxidized: an absolute maximum of EXAFS Fourier transform at R ~ 1.6 Å corresponds to Zn–O distance. Based on XANES data, we suggest an interaction between implanted Zn atoms and Si support.

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ACKNOWLEDGMENTS

The work is supported partially by Program of FASO of Russia, State Project 14 (Theme 40.3, section no. 0066-2014-0025 and Theme 40.2, section no. 0066-2014-0024).

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Authors and Affiliations

  1. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    E. V. Khramov

  2. Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    V. V. Privezentsev

  3. Scientific Research Institute of System Analysis, Russian Academy of Sciences, 117218, Moscow, Russia

    V. V. Privezentsev

Authors
  1. E. V. Khramov
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  2. V. V. Privezentsev
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Correspondence to V. V. Privezentsev.

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Khramov, E.V., Privezentsev, V.V. XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Si. Semiconductors 52, 2070–2072 (2018). https://doi.org/10.1134/S1063782618160121

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  • DOI: https://doi.org/10.1134/S1063782618160121

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