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Spin Injection and Accumulation in the Planar NiFe–InSb–NiFe and NiFe–Cu–NiFe Spin Valves

  • SPIN-RELATED PHENOMENA IN NANOSTRUCTURES
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Abstract

Spin injection and accumulation have been studied for NiFe–InSb–NiFe and NiFe–Cu–NiFe planar spin valves with direct injection current I in nonlocal (NLSV) and local (LSV) measurement configurations at temperature 8–300 K. The value of the generated voltage U and the character of the dependence U(I) drastically changed for currents I greater some critical value Ic due to thermoelectric effects. For NLSV configuration and currents I<Ic the value of U is of 2–3 order of magnitude higher for NiFe–InSb–NiFe (U ≈ 1–3 mV at 300 K) structures in comparison with NiFe–Cu–NiFe (U ≈ 4–20 µV at 8 K). For LSV geometry electrical detection of spin current was observed only for NiFe–Cu–NiFe structure, where for I<Ic the magnetoresistance (MR) effect of the order 0.5% was detected. For currents I of 1.5–2% higher than Ic the MR of the order of 10–30% was observed for both NLSV and LSV configurations for studied structures.

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ACKNOWLEDGMENTS

This work was supported by the Russian Foundation for Basic Research, projects nos. 16-37-60052, 16-29-14058.

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Authors and Affiliations

  1. V.A. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Saratov, Russia

    Y. V. Nikulin, Y. V. Khivintsev, A. G. Veselov & Y. A. Filimonov

  2. Saratov State University, Saratov, Russia

    Y. V. Nikulin, Y. V. Khivintsev & Y. A. Filimonov

  3. Yuri Gagarin State Technical University of Saratov, Saratov, Russia

    Y. A. Filimonov

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  1. Y. V. Nikulin
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  2. Y. V. Khivintsev
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  3. A. G. Veselov
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  4. Y. A. Filimonov
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Correspondence to Y. V. Nikulin.

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Nikulin, Y.V., Khivintsev, Y.V., Veselov, A.G. et al. Spin Injection and Accumulation in the Planar NiFe–InSb–NiFe and NiFe–Cu–NiFe Spin Valves. Semiconductors 52, 1871–1874 (2018). https://doi.org/10.1134/S1063782618140221

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  • DOI: https://doi.org/10.1134/S1063782618140221

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