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Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

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Abstract

The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.

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ACKNOWLEDGMENTS

This study was supported by the Russian Science Foundation, project no. 16-19-10033.

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  1. Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, 410019, Saratov, Russia

    R. K. Yafarov

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  1. R. K. Yafarov
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Correspondence to R. K. Yafarov.

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Translated by E. Bondareva

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Yafarov, R.K. Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals. Semiconductors 52, 1104–1109 (2018). https://doi.org/10.1134/S1063782618090245

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