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Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures

  • Microelectronic and Nanoelectronic Technology
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Abstract

A nanocarbon-emitter technology for integrated field-emission elements has been developed. The modes in which various carbon film structures of diamond, graphite, and graphene-like types are produced were determined. The low-temperature method of obtaining ultradispersed diamonds was examined. It is shown that the high-emission properties of nanodiamond-graphite emitters result from the self-organization of diamond nanocrystals in a graphite film in the course of deposition from ethanol vapor at low pressure with the use of a strongly nonequilibrium microwave plasma. The following parameters of integrated field-emission diodes were obtained: emission threshold of 2.5 V/μm and emission current density of 1.75 A/cm2. The highest current density of more than 20 A/cm2 was obtained in a study of blade-type emitters.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, Saratov, Russia

    R. K. Yafarov

  2. Molecular Electronics Research Institute, Moscow, Russia

    E. S. Gornev & S. N. Orlov

  3. National Research University Moscow Institute of Electronic Technology (MIET), Moscow, Russia

    S. P. Timoshenkov, V. P. Timoshenkov & A. S. Timoshenkov

Authors
  1. R. K. Yafarov
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  2. E. S. Gornev
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  3. S. N. Orlov
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  4. S. P. Timoshenkov
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  5. V. P. Timoshenkov
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  6. A. S. Timoshenkov
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Corresponding author

Correspondence to V. P. Timoshenkov.

Additional information

Original Russian Text © R.K. Yafarov, E.S. Gornev, S.N. Orlov, S.P. Timoshenkov, V.P. Timoshenkov, A.S. Timoshenkov, 2016, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2016, Vol. 21, No. 2, pp. 122–127.

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Yafarov, R.K., Gornev, E.S., Orlov, S.N. et al. Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures. Semiconductors 50, 1726–1728 (2016). https://doi.org/10.1134/S106378261613011X

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  • DOI: https://doi.org/10.1134/S106378261613011X

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