Abstract
A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n + layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.
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Original Russian Text © D.A. Usanov, S.A. Nikitov, A.V. Skripal, D.V. Ponomarev, E.V. Latysheva, 2016, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2016, Vol. 21, No. 2, pp. 187–194.
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Usanov, D.A., Nikitov, S.A., Skripal, A.V. et al. Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals. Semiconductors 50, 1759–1763 (2016). https://doi.org/10.1134/S1063782616130091
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DOI: https://doi.org/10.1134/S1063782616130091