Abstract
The localization of the transitions in the bulk of the Brillouin zone that form the main structures in the spectra of the imaginary part of the permittivity in the range up to ~7 eV for III–V semiconductors (AlSb, GaSb, InSb, and InAs) is determined using electron density functional theory. It is established that intense transitions occur not only in the vicinity of the high-symmetry axes of the Brillouin zone, but also in some specific large volumes of the irreducible part of the Brillouin zone.
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References
O. Ueda and S. J. Pearton, Materials and Reliability Handbook for Semiconductor Optical and Electron Devices (Springer, New York, 2013)
Ch. Liu, Y. Li, and Y. Zeng, Engineering 2, 617 (2010).
Semiconductors and Semimetals, Vol. 3: Optical Properties of Semiconductors (Semiconductor Compounds of III–V Type), Ed. by R. K. Willardson and A. C. Beer (Academic, New York, 1966).
V. V. Sobolev, Optical Fundamental Spectra of III–V Compounds (Shtiintsa, Kishinev, 1979) [in Russian].
P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 2005).
V. V. Sobolev, Optical Properties and Electronic Structure of Nonmetals, Vol. 1: Introduction to the Theory (Inst. Komp. Issled., Moscow, Izhevsk, 2012) [in Russian].
V. V. Sobolev, Optical Properties and Electronic Structure of Nonmetals, Vol. 2: Simulation of Integral Spectra by Elementary Bands (Inst. Komp. Issled., Moscow, Izhevsk, 2012) [in Russian].
V. V. Sobolev and V. V. Nemoshkalenko, Electronic. Structure of Solids in the Region of Fundamental Absorption Edge, Vol. 1: Introduction to the Theory (Naukova Dumka, Kiev, 1992) [in Russian].
F. H. Pollak, C. W. Higginbotham, and M. Cardona, in Proceedings of the International Conference on Physics of Semiconductors (Kyoto, Japan, 1966), Vol. 21, p. 20.
C. W. Higginbotham, F. H. Pollak, and M. Cardona, in Proceedings of the 9 International Conference on Physics of Semiconductors (Moscow, 1968), Vol. 11, p. 57.
R. N. Cahn and M. Cohen, Phys. Rev. B 1, 2569 (1970).
V. C. De Alvarez, J. P. Walter, R. W. Boyd, and M. L. Cohen, J. Phys. Chem. Solids 34, 337 (1973).
I. Topol, H. Neumann, and E. Hess, Czech. J. Phys. B 24, 107 (1974).
J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
M. Alouani, L. Brey, and N. E. Christensen, Phys. Rev. B 37, 1167 (1988).
M.-Zh. Huang and W. Y. Ching, Phys. Rev. B 47, 9449 (1993).
R. Asahi, W. Mannstadt, and A. J. Freeman, Phys. Rev. B 59, 7486 (1999).
S. H. Rhim, M. Kim, A. J. Freeman, and R. Asahi, Phys. Rev. B 71, 045202 (2005).
A. H. Reshak, Eur. Phys. J. B 47, 503 (2005).
Zh. Feng, H. Hu, Sh. Cui, W. Wang, and C. Lu, Centr. Eur. J. Phys. 7, 786 (2009).
N. N. Anua, R. Ahmed, A. Shaari, M. A. Saeed, B. U. Haq, and S. Goumri-Said, Semicond. Sci. Technol. 28, 105015 (2013).
M. I. Ziane, Z. Bensaad, B. Labdelli, and H. Bennacer, Sens. Transducer. 27, 374 (2014).
Y. Wang, H. Yin, R. Cao, F. Zahid, Y. Zhu, L. Liu, J. Wang, and H. Guo, Phys. Rev. B 87, 235203 (2013).
B. D. Malone and M. L. Cohen, J. Phys.: Condens. Matter 25, 105503 (2013).
S. Zollner, Ch. Lin, E. Schönherr, A. Böhringer, and M. Cardona, J. Appl. Phys. 66, 383 (1989).
S. Zollner, M. Garriga, J. Humlicek, S. Gopalan, and M. Cardona, Phys. Rev. B 43, 4349 (1991).
S. Logothetidis, L. Viña, and M. Cardona, Phys. Rev. B 31, 947 (1985).
T. J. Kim, J. J. Yoon, S. Y. Hwang, Y. W. Jung, T. H. Chong, Y. D. Kim, H. Kim, and Y.-Ch. Chang, Appl. Phys. Lett. 97, 171912 (2010).
Springer Handbook of Condensed Matter and Materials Data, Ed. by W. Martienssen and H. Warlimont (Springer, Berlin, 2005).
A. V. Bakulin and S. E. Kul’kova, Russ. Phys. J. 57, 996 (2014).
P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka, and J. Luitz, WIEN2K (Techn. Univ. Wien, Austria, 2001).
J. P. Perdew, S. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
P. E. Blöchl, O. Jepsen, and O. K. Andersen, Phys. Rev. B 49, 16223 (1994).
R. Markowski and M. Podgorny, J. Phys.: Condens. Matter 3, 9041 (1991).
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Original Russian Text © V.V. Sobolev, D.A. Perevoshchikov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 582–588.
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Sobolev, V.V., Perevoshchikov, D.A. Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals. Semiconductors 50, 572–578 (2016). https://doi.org/10.1134/S1063782616050213
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DOI: https://doi.org/10.1134/S1063782616050213