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Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches

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Abstract

Methods of predicting the electronic structure of disordered semiconductor alloys involving mainly isoelectronic substitution are reviewed. Special emphasis is placed on analytical methods of studying currently available models of alloys. An approximate equation for the localization threshold of electronic states in the Lifshitz model is considered, and the inaccuracy of this equation is estimated. The contributions of the perturbation potential of an individual impurity and of crystal-lattice distortions in the vicinity of the impurity center are analyzed on the basis of the Faddeev equations. The contributions of intrinsic impurity potentials and volume effects to the formation of the electronic structure of semiconductor alloys are esti- mated. Methods of calculating matrix elements of the perturbation potentials of isoelectronic impurities in alloys with consideration for deformation effects are considered. The procedure of calculating the compositional dependence of the band gap of multicomponent alloys is described. A comparative analysis of various methods for predicting the formation of electronic states bound at individual isoelectronic impurities in semiconductors is conducted. The theory of the energy spectrum of charged impurities in isoelectronic alloys is presented.

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  1. Novgorod State University, Novgorod, 173003, Russia

    A. Yu. Zakharov

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Correspondence to A. Yu. Zakharov.

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Dedicated to the memory of my Teachers, Prof. Yuli Mikhailovich Ivanchenko (December 18, 1938–December 26, 2014) and Corresponding Member of the Ukrainian Academy of Sciences, Prof. Kirill Borisovich Tolpygo (May 3, 1916–May 13, 1994).

Original Russian Text © A.Yu. Zakharov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 865–886.

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Zakharov, A.Y. Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches. Semiconductors 49, 843–866 (2015). https://doi.org/10.1134/S1063782615070246

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