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Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs1–xPx, GaAsxSb1–x, and GaPxSb1–x layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii & V. G. Danil’chenko

  2. St. Petersburg State Electrotechnical University LETI, St. Petersburg, 197376, Russia

    V. I. Vasil’ev

  3. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. I. Kuchinskii

Authors
  1. V. I. Vasil’ev
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  2. G. S. Gagis
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  3. V. I. Kuchinskii
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  4. V. G. Danil’chenko
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Corresponding author

Correspondence to G. S. Gagis.

Additional information

Original Russian Text © V.I. Vasil’ev, G.S. Gagis, V.I. Kuchinskii, V.G. Danil’chenko, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 984–988.

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Vasil’ev, V.I., Gagis, G.S., Kuchinskii, V.I. et al. Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions. Semiconductors 49, 962–966 (2015). https://doi.org/10.1134/S1063782615070234

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  • DOI: https://doi.org/10.1134/S1063782615070234

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