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Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

  • Surfaces, Interfaces, and Thin Films
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Abstract

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsin & K. S. Zhuravlev

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    K. S. Zhuravlev

Authors
  1. D. S. Milakhin
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  2. T. V. Malin
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  3. V. G. Mansurov
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  4. Yu. G. Galitsin
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  5. K. S. Zhuravlev
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Correspondence to D. S. Milakhin or K. S. Zhuravlev.

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Original Russian Text © D.S. Milakhin, T.V. Malin, V.G. Mansurov, Yu.G. Galitsin, K.S. Zhuravlev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 925–931.

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Milakhin, D.S., Malin, T.V., Mansurov, V.G. et al. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow. Semiconductors 49, 905–910 (2015). https://doi.org/10.1134/S1063782615070180

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  • DOI: https://doi.org/10.1134/S1063782615070180

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