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Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

  • Physics of Semiconductor Devices
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Abstract

A simple analytical theory of the picosecond switching of high-voltage overloaded p+–i–n+ photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

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Authors and Affiliations

  1. Lenin All-Russia Electrical Engineering Institute, ul. Krasnokazarmennaya 12, Moscow, 111250, Russia

    A. S. Kyuregyan

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  1. A. S. Kyuregyan
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Correspondence to A. S. Kyuregyan.

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Original Russian Text © A.S. Kyuregyan, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 989–993.

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Kyuregyan, A.S. Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination. Semiconductors 49, 967–971 (2015). https://doi.org/10.1134/S1063782615070167

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  • DOI: https://doi.org/10.1134/S1063782615070167

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