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Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

  • Spectroscopy, Interaction with Radiation
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Abstract

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V–1 s–1, and a hole concentration of 6.25 × 1017 cm–3.

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Authors and Affiliations

  1. Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal, 575025, Mangalore, India

    N. Sadananda Kumar, Kasturi V. Bangera & G. K. Shivakumar

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  1. N. Sadananda Kumar
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  2. Kasturi V. Bangera
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  3. G. K. Shivakumar
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Correspondence to N. Sadananda Kumar.

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Sadananda Kumar, N., Bangera, K.V. & Shivakumar, G.K. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique. Semiconductors 49, 899–904 (2015). https://doi.org/10.1134/S1063782615070143

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  • DOI: https://doi.org/10.1134/S1063782615070143

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