Abstract
The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron-beam lithography and reactive ion etching are used for the formation of ordered Si-NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiONx layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic-force microscopy are used to characterize the obtained structures. The Si-NP arrays acquire various colors when exposed to “bright-field” illumination. The spectra of reflection from the Si-NP arrays in the wavelength range 500–1150 nm are obtained.
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Original Russian Text © L.S. Golobokova, Yu.V. Nastaushev, F.N. Dultsev, N.V. Kryzhanovskaya, E.I. Moiseev, A.S. Kozhukhov, A.V. Latyshev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 961–965.
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Golobokova, L.S., Nastaushev, Y.V., Dultsev, F.N. et al. Optical and electrical properties of silicon nanopillars. Semiconductors 49, 939–943 (2015). https://doi.org/10.1134/S1063782615070088
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DOI: https://doi.org/10.1134/S1063782615070088