Abstract
Changes in capacitance-voltage characteristics of p-n junctions with a linear or close-to-linear uncompensated charge distribution under neutron irradiation are analyzed. It is confirmed that an intrinsic conductivity region is formed near the p-n junction due to such exposure. Empirical formulas are derived which describe the dependence of the sizes of this region and the effective concentration gradient of uncompensated charge on the neutron fluence in a wide range of initial (before neutron irradiation) concentration gradients (from 3 × 1018 to 2 × 1020 cm−4) and initial silicon resistivities (from 0.3 to 2 Ω cm).
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Original Russian Text © A.Z. Rakhmatov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 7, pp. 963–969.
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Rakhmatov, A.Z. Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters. Semiconductors 48, 935–941 (2014). https://doi.org/10.1134/S1063782614070185
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DOI: https://doi.org/10.1134/S1063782614070185